Excited to share our latest work from a TU/e–IBM collaboration within the PHASTRAC project, now published in ACS Applied Materials & Interfaces.
In this study, we use reactive molecular dynamics simulations to disentangle electric-field- and temperature-driven mechanisms during filament formation in TaOâ‚“/HfOâ‚‚ ReRAMs. Our results reveal that filament growth is largely a localized, thermally activated process. We show how different ionic species respond under bias and where conductive filaments preferentially nucleate, offering new atomic-scale insight into multilevel filamentary ReRAM devices.
Big thanks to the teams at TU/e and IBM for a great collaboration.
➡️ link to the paper: link
